FLL810IQ-4C

FEATURES Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package FLL810IQ-4C L-Band High Power GaAs FET DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PT Tstg Tch Tc = 25°C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with gate resistance of 5Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. 15 -5 136 -65 to +175 +175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Symbol Conditions Drain Current IDSS VDS = 5V, VGS = 0V Limits Min. Typ. Max. -8- Pinch-Off Voltage Vp VDS = 5V, IDS = 220mA -0.1 -0.3 -0.5 Gate-Source Breakdown Voltage VGSO IGS = -2.2mA -5 - - Output Power Linear Gain (Note 1) Power-Added Efficiency Drain Current Pout...