FLU35XM

FEATURES High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with gate resistance of 100Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. 15 -5 15 -65 to +175 +175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Limits Min. Typ. Max. Unit Drain Current Transconductance IDSS gm VDS = 5V, VGS = 0V - 1200 1800 VDS = 5V, IDS = 800mA - 600 - mA mS Pinch-Off Voltage Vp VDS = 5V, IDS = 60mA -1.0 -2.0 -3.5 V Gate-Source Breakdown Vo...