L-Band Medium & High Power GaAs FET
FLU17ZME1
L-Band Medium & High Power GaAs FET
FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(...
Description
FLU17ZME1
L-Band Medium & High Power GaAs FET
FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available
DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C)
Item Drain-Source Voltage
Symbol VDS
Rating 15
Gate-Soutce Voltage
VGS
-5
Total Power Dissipation
PT
8.3
Storage Temperature Tstg -55 to +150
Channel Temperature
Tch
150
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 deg.C)
Unit V V W
deg.C deg.C
Item DC Input Voltage Forward Gate Current Reverse Gate Current
Symbol VDS IGF IGR
Condition ≦10 ≦9.6 ≧-1.0
Unit V
mA mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current Trans Conductance
Pinch-off Voltage Gate-Source Breakdown Voltage
Symbol
IDSS gm Vp VGSO
Test Conditions VDS=5V,VGS=0V VDS=5V,IDS=400mA VDS=5V,IDS=30mA
IGS=-30µA
Min. -
-1.0
-5
Limit Typ. 600
300 -2.0
-
Max. 900
-3.5
-
Unit
mA mS V V
Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P.
P1dB G1dB
VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.)
31.5 32.5 - dBm 11.5 12.5 - dB
Thermal Resistance
Rth Channel to Case
- 12 15 deg.C/W
C...
Similar Datasheet