Document
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package
FLX107MH-12
X, Ku Band Power GaAs FET
DESCRIPTION
The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15 -5 7.5 -65 to +175 175
Unit
V V W °C °C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current Transconductance
IDSS gm
VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA
-
Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P.
Power-added Efficiency
Vp VGSO P1dB
G1dB ηadd
VDS = 5V, IDS = 20mA IGS = -20µA
VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz
-1.0 -5 29.0 6.5 -
Limit Typ. Max. 400 600 200 -2.0 -3.5
--
30.0 -
7.5 -
33 -
Unit mA mS V V dBm dB %
Thermal Resistance CASE STYLE: MH
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1 August 1999
1
Total Power Dissipation (W)
FLX107MH-12
X, Ku Band Power GaAs FET
POWER DERATING CURVE 10
8
6
4
2
0 50 100 150 200 Case Temperature (°C)
Drain Current (mA)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500
400 VGS =0V
300 -0.5V
-1.0V 200
-1.5V 100
-2.0V
0 2 4 6 8 10 Drain-Source Voltage (V)
Output Power (dBm)
OUTPUT POWER vs. INPUT POWER
f = 12.5GHz IDS ≈ 0.6 IDSS
VDS=10V 30 VDS=8.5V
Pout
28
26
24 ηadd
22
40 20
14 16 18 20 22 24 Input Power (dBm)
ηadd (%) P1dB (dBm)
P1dB & ηadd vs. VDS
f = 12.5 GHz IDS ≈ 0.6 IDSS 31
30 P1dB 29
28 27
26
ηadd
40 30 20 10
8 9 10 Drain-Source Voltage (V)
ηadd (%)
2
FLX107MH-12
X, Ku Band Power GaAs
+j50
+j25
14GHz
8
13
12 +j10
11
10
14GHz
0 9 10
25
8 -j10
13
50Ω
9
100 12
+j100
10 250 11
+j250 -j250
S11 S22
180°
-j25 -j100 -j50
+90°
S21 S12
12
11
9 8 10
12 13
13
11
9 10 8
14GHz 14GHz
SCALE FOR |S21|
.02 .04 .06 .08 SCALE FOR |S12|
.04
.08
1.2
1.6
0°
-90°
FREQUENCY
S11
(MHZ)
MAG ANG
S-PARAMETERS
VDS = 10V, IDS = 240mA
S21 S12
MAG ANG
MAG ANG
S22 MAG ANG
500 1000 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000
.955 -100.1 .930 -137.3 .841 84.2 .820 72.6 .794 59.1 .766 44.2 .721 26.8 .681 8.7 .627 -11.9 .576 -34.