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FLX107MH-12 Dataheets PDF



Part Number FLX107MH-12
Manufacturers Eudyna Devices
Logo Eudyna Devices
Description X / Ku Band Power GaAs FET
Datasheet FLX107MH-12 DatasheetFLX107MH-12 Datasheet (PDF)

FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLX107MH-12 X, Ku Band Power GaAs FET DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE.

  FLX107MH-12   FLX107MH-12



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FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLX107MH-12 X, Ku Band Power GaAs FET DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Rating 15 -5 7.5 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current Transconductance IDSS gm VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA - Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Vp VGSO P1dB G1dB ηadd VDS = 5V, IDS = 20mA IGS = -20µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz -1.0 -5 29.0 6.5 - Limit Typ. Max. 400 600 200 -2.0 -3.5 -- 30.0 - 7.5 - 33 - Unit mA mS V V dBm dB % Thermal Resistance CASE STYLE: MH Rth Channel to Case - 15 20 °C/W G.C.P.: Gain Compression Point Edition 1.1 August 1999 1 Total Power Dissipation (W) FLX107MH-12 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 8 6 4 2 0 50 100 150 200 Case Temperature (°C) Drain Current (mA) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 400 VGS =0V 300 -0.5V -1.0V 200 -1.5V 100 -2.0V 0 2 4 6 8 10 Drain-Source Voltage (V) Output Power (dBm) OUTPUT POWER vs. INPUT POWER f = 12.5GHz IDS ≈ 0.6 IDSS VDS=10V 30 VDS=8.5V Pout 28 26 24 ηadd 22 40 20 14 16 18 20 22 24 Input Power (dBm) ηadd (%) P1dB (dBm) P1dB & ηadd vs. VDS f = 12.5 GHz IDS ≈ 0.6 IDSS 31 30 P1dB 29 28 27 26 ηadd 40 30 20 10 8 9 10 Drain-Source Voltage (V) ηadd (%) 2 FLX107MH-12 X, Ku Band Power GaAs +j50 +j25 14GHz 8 13 12 +j10 11 10 14GHz 0 9 10 25 8 -j10 13 50Ω 9 100 12 +j100 10 250 11 +j250 -j250 S11 S22 180° -j25 -j100 -j50 +90° S21 S12 12 11 9 8 10 12 13 13 11 9 10 8 14GHz 14GHz SCALE FOR |S21| .02 .04 .06 .08 SCALE FOR |S12| .04 .08 1.2 1.6 0° -90° FREQUENCY S11 (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 240mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 500 1000 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 .955 -100.1 .930 -137.3 .841 84.2 .820 72.6 .794 59.1 .766 44.2 .721 26.8 .681 8.7 .627 -11.9 .576 -34.


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