Document
STB80PF55 STP80PF55
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET
Features
Type STP80PF55 STB80PF55
VDSS 55V 55V
RDS(on) <0.018Ω <0.018Ω
■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
ID 80A 80A
Application
■ Switching applications
Description
These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
3 1
D2PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code STP80PF55 STB80PF55
Marking P80PF55 B80PF55
Package TO-220 D2PAK
Packaging Tube
Tape and reel
August 2010
Doc ID 8177 Rev 6
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www.st.com
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Contents
Contents
STB80PF55, STP80PF55
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 8177 Rev 6
STB80PF55, STP80PF55
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25°C
ID IDM (2)
Drain current (continuous) at TC = 100°C Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS(4)
Single pulse avalanche energy
Tj Operating junction temperature Tstg Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS. 4. Starting Tj=25°C, ID=80A, VDD=40V.
Value 55 ±16 80 57 320 300 2 7 1.4
-55 to 175
Unit V V A A A W
W/°C V/ns
J
°C
Note:
Table 3. Thermal data
Symbol
Parameter
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
Value 0.5 62.5 300
Unit °C/W °C/W
°C
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
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Electrical characteristics
2 Electrical characteristics
STB80PF55, STP80PF55
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source V(BR)DSS breakdown volta.