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P80PF55 Dataheets PDF



Part Number P80PF55
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP80PF55
Datasheet P80PF55 DatasheetP80PF55 Datasheet (PDF)

STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type STP80PF55 STB80PF55 VDSS 55V 55V RDS(on) <0.018Ω <0.018Ω ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 80A 80A Application ■ Switching applications Description These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing dens.

  P80PF55   P80PF55



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STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type STP80PF55 STB80PF55 VDSS 55V 55V RDS(on) <0.018Ω <0.018Ω ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 80A 80A Application ■ Switching applications Description These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. 3 1 D2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code STP80PF55 STB80PF55 Marking P80PF55 B80PF55 Package TO-220 D2PAK Packaging Tube Tape and reel August 2010 Doc ID 8177 Rev 6 1/16 www.st.com 16 Contents Contents STB80PF55, STP80PF55 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 8177 Rev 6 STB80PF55, STP80PF55 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25°C ID IDM (2) Drain current (continuous) at TC = 100°C Drain current (pulsed) PTOT Total dissipation at TC = 25°C Derating factor dv/dt (3) Peak diode recovery voltage slope EAS(4) Single pulse avalanche energy Tj Operating junction temperature Tstg Storage temperature 1. Current limited by package. 2. Pulse width limited by safe operating area . 3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS. 4. Starting Tj=25°C, ID=80A, VDD=40V. Value 55 ±16 80 57 320 300 2 7 1.4 -55 to 175 Unit V V A A A W W/°C V/ns J °C Note: Table 3. Thermal data Symbol Parameter Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit °C/W °C/W °C For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Doc ID 8177 Rev 6 3/16 Electrical characteristics 2 Electrical characteristics STB80PF55, STP80PF55 (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Drain-source V(BR)DSS breakdown volta.


HX8806 P80PF55 STB80PF55


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