IRFB16N50K

PD - 95855 SMPS MOSFET IRFB16N50K Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V cID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage ePeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw HEXFET® Power MOSFET VDSS RDS(on) typ. ID 500V 285m: 17A S D G TO-220AB Max. 17 11 68 280 2.3 ± 30 8.0 -55 to + 150 300 (1.6mm from case ) y y10 lbf in (1.1N m) Units A W W/°C V V/ns °C Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÃcIAR Avalanche Current cEAR Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 310 17 28 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS Junction-to-Case Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient www.irf.com Typ. ––– 0.50 ––– Max. 0.44 ––– 62 Units °C/W 1 03/11/04 IRFB16N50K Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sou...