SiHFPS29N60L

IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 220 67 96 Single D 0.175 SUPER-247TM G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb S D G FEATURES Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT Enhances dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offer Improved Noise Immunity Lead (Pb)-free Available APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications SUPER-247TM IRFPS29N60LPbF SiHFPS29N60L-E3 IRFPS29N60L SiHFPS29N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 2...