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IRFZ46L

Power MOSFET

Description

l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a...

International Rectifier

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