IRFPS29N60LPbF

SMPS MOSFET PD - 95907 IRFPS29N60LPbF Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 175mΩ 130ns 29A Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity. Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 29 18 110 480 Units A W VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage ePeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range 3.8 ±30 15 -55 to + 150 W/°C V V/ns °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw Diode Characteristics 1.1(10) Nm (lbfin) Symbol IS Parameter Continuous Source Current Min. Typ. Max. Units Conditions ––– ––– 29 MOSFET symbol (Body Diode) A showing the ÃcISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 110 ––– ––– 1.5 integral reverse fp-n junction diode. V TJ = 25°C, IS = 29A, VGS = 0V ftrr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 29A ––– 240 360 ...