Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
12 3.0 7.1 Single
I2PAK (TO-262)
D
0.27
DS G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL5.