IRL520L

Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single I2PAK (TO-262) D 0.27 DS G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES Halogen-free According to IEC 61249-2-21 Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS (on) Specified at VGS = 4 V and 5 V 175°C Operating Temperature Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL520L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 5 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature ...