C4585

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4585 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current ICM Collector current-peak IB Base current IBM Base current-peak PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 1200 800 7 10 20 4 8 85 150 -55~150 UNIT V V V A A A A W MAX 1.47 UNIT /W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4585 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A VBEsat Base-emitter saturation voltage IC=5A; IB=1 A VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0 IEBO Emitter cut-off current At rated voltage ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage hFE-1 DC current gain IC=5 A ; VCE=5V hFE-2 DC current gain IC=1mA ; VCE=5V fT Transition frequency IC=1A ; VCE=10V Switching times ton Turn-on time tstg Storage t...