2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. D...
