N-CHANNEL MOSFET
N N- CHANNEL MOSFET
R
JCS13N50FT
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
13 A 500 V 0.46Ω 37 nC
z z z U...
Description
N N- CHANNEL MOSFET
R
JCS13N50FT
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
13 A 500 V 0.46Ω 37 nC
z z z UPS
APPLICATIONS
z High efficiency switch mode power supplies
z Electronic lamp ballasts based on half bridge
z UPS
z z Crss ( 25pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
Package
ORDER MESSAGE
Order codes JCS13N50FT-O-F-N-B
Marking JCS13N50FT
Package TO-220MF
Halogen Free NO
Packaging Tube
Device Weight 2.20 g(typ)
:201010B
1/8
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage
Symbol VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current -pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current (note 1)
IAR
( 1) Repetitive Avalanche Current (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
JCS13N50FT
Value
500 13.0*
8* 52*
±30
845
13.0
5.0
4.5
Unit V A A A
V
mJ
A
mJ
V/ns
50 0.4 -55~+150 300
W W/℃
℃ ℃
:201010B
2/8
R
ELECTRICAL CHARACTERISTIC
JCS13N50FT
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Curre...
Similar Datasheet