2SK1918S

2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 25 100 25 25 53 50 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK1918(L), 2SK1918(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Typ Max —— —— — ±10 — 250 — 2.25 0.03 0.04 0.043 0.06 Forward transfer admittance |yfs| 12 21 — Input capacitance Ciss — 1450 — Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) — — — 655 — 195...