2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • ...
2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching
regulator, DC - DC converter Avalanche ratings
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
November 1996
2SK1918(L), 2SK1918(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 %
2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID I *1
D(pulse)
IDR IAP*3 EAR*3 Pch*2
Tch
Tstg
Ratings 60 ±20 25 100 25 25 53 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SK1918(L), 2SK1918(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 1.0 —
—
Typ Max ——
——
— ±10 — 250 — 2.25 0.03 0.04
0.043 0.06
Forward transfer admittance |yfs|
12 21 —
Input capacitance
Ciss — 1450 —
Output capacitance Reverse transfer capacitance Turn-on delay time
Coss Crss td(on)
— — —
655 — 195...