IRFSL11N50A

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 51 Qgs (nC) 12 Qgd (nC) 23 Configuration Single I2PAK (TO-262) D 0.55 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. I2PAK (TO-262) IRFSL11N50APbF SiHFSL11N50A-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig. 12). c. ISD  11 A, dI/dt  185 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. LIMIT 500 ± 30 11 7.0 44 1...