SiHFZ14S

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single 0.20 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFZ14S-GE3 IRFZ14SPbF SiHFZ14S-E3 FEATURES Halogen-free According to IEC 61249-2-21 Definition Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S) Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFZ14L, SiHFZ44L) ...