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IRFBG30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
1000
VGS = 10 V
5.0
80
10
42
Single
FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated
Available
• Fast switching • Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRFBG30PbF IRFBG30PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12) c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 1000 ± 20 3.1 2.0
12 1.0 280 3.1 13 125 1.0 -55 to +150 300 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
S21-1045-Rev. C, 25-Oct-2021
1
Document Number: 91124
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFBG30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic
VDS ΔVDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.9 A b
VDS = 10 V, ID = 1.9 A b
1000 2.0 2.1
-
-
V
1.4
-
V/°C
-
4.0
V
-
± 100 nA
-
100
μA
-
500
-
5.0
Ω
-
-
S
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf Rg
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
980
-
-
140
-
pF
-
50
-
-
VGS = 10 V
ID = 3.1 A, VDS =400 V, see fig. 6 and 13 b
-
-
-
80
-
10
nC
-
42
-
12
-
VDD = 500 V, ID = 3.1 A Rg = 12 Ω, RD = 170 Ω, see fig. 10 b
-
25
-
ns
-
89
-
-
29
-
f = 1 MHz, open drain
0.4
-
1.8
Ω
Internal drain inductance Internal source inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current Pulsed diode forward current a
IS
MOSFET symbol showing the
integral reverse
D G
-
-
3.1
A
ISM
p - n junction diode
-
-
12
S
Body diode voltage
VSD
TJ = 25 °C, IS = 3.1 A, VGS = 0 V b
-
-
1.8
V
Body diode reverse recovery time Body diode reverse recovery charge
trr Qrr
-
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b
-
410
620
ns
1.3
2.0
μC
Forward turn-on time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-1045-Rev. C, 25-Oct-2021
2
Document Number: .