DatasheetsPDF.com

IRFBG30 Dataheets PDF



Part Number IRFBG30
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFBG30 DatasheetIRFBG30 Datasheet (PDF)

www.vishay.com IRFBG30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 5.0 80 10 42 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provide.

  IRFBG30   IRFBG30


Document
www.vishay.com IRFBG30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 5.0 80 10 42 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFBG30PbF IRFBG30PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12) c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 1000 ± 20 3.1 2.0 12 1.0 280 3.1 13 125 1.0 -55 to +150 300 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m S21-1045-Rev. C, 25-Oct-2021 1 Document Number: 91124 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFBG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 1000 V, VGS = 0 V VDS = 800 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.9 A b VDS = 10 V, ID = 1.9 A b 1000 2.0 2.1 - - V 1.4 - V/°C - 4.0 V - ± 100 nA - 100 μA - 500 - 5.0 Ω - - S Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 980 - - 140 - pF - 50 - - VGS = 10 V ID = 3.1 A, VDS =400 V, see fig. 6 and 13 b - - - 80 - 10 nC - 42 - 12 - VDD = 500 V, ID = 3.1 A Rg = 12 Ω, RD = 170 Ω, see fig. 10 b - 25 - ns - 89 - - 29 - f = 1 MHz, open drain 0.4 - 1.8 Ω Internal drain inductance Internal source inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 - nH - 7.5 - Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol showing the integral reverse D G - - 3.1 A ISM p - n junction diode - - 12 S Body diode voltage VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 V b - - 1.8 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr - TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b - 410 620 ns 1.3 2.0 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-1045-Rev. C, 25-Oct-2021 2 Document Number: .


GP14NC60KD IRFBG30 TAA4765


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)