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MDF4N65B Dataheets PDF



Part Number MDF4N65B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF4N65B DatasheetMDF4N65B Datasheet (PDF)

MDF4N65B N-channel MOSFET 650V MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 650V ID = 4.0A RDS(ON) ≤ 2.2 Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switch.

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MDF4N65B N-channel MOSFET 650V MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 650V ID = 4.0A RDS(ON) ≤ 2.2 Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jul. 2012 Version 1.2 1 G Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Symbol RθJA RθJC S Rating 650 ±30 4.0* 2.6* 16* 35 0.28 3.5 4.5 170 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Rating 62.5 3.55 Unit oC/W MagnaChip Semiconductor Ltd. MDF4N65B N-channel MOSFET 650V Ordering Information Part Number MDF4N65BTH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf IS VSD trr Qrr Test Condition ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 2.0A VDS = 30V, ID = 2.0A VDS = 520V, ID = 4.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 325V, ID = 4.0A, RG = 25Ω(3) IS = 4.0A, VGS = 0V IF = 4.0A, dl/dt = 100A/µs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤4.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=19.6mH, IAS=4.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Min 650 2.0 - - - - Typ 1.8 3.11 11.6 2.3 4.6 518 3 61 13 22 41 25 4 245 1.5 Max Unit V 4.0 1 µA 100 nA 2.2 Ω -S - nC - pF - ns - -A 1.4 V - ns - µC Jul. 2012 Version 1.2 2 MagnaChip Semiconductor Ltd. ID,Drain Current [A] MDF4N65B N-channel MOSFET 650V 7 Vgs=4.5V 6 =5.0V =5.5V =6.0V 5 =6.5V =7.0V =8.0V 4 =10.0V =15.0V 3 2 1 Notes 1. 250㎲ PulseTest 2. TC=25℃ 0 0 5 10 15 VDS,Drain-Source Voltage[V] Fig.1 On-Region Characteristics 20 3.0 ※ Notes : 2.5 1. VGS = 10 V 2. ID = 2.0A 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature 150 BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON)R [Ω ] 3.6 3.4 3.2 3.0 2.8 2.6 VGS=10.0V 2.4 VGS=20V 2.2 2.0 1.8 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 ID,DrainCurrent [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 0 50 100 TJ, Junction Temperature [oC] 150 Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance ID(A) * Notes ; 10 1. Vds=30V 150℃ 25℃ -55℃ 1 456 VGS [V] Fig.5 Transfer Characteristics 7 IDR Reverse Drain Current [A] ※ Notes : 1. VGS = 0 V 2.250µs Pulse test 10 150℃ 25℃ 1 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Jul. 2012 Version 1.2 3 MagnaChip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDF4N65B N-channel MOSFET 650V 10 ※ Note : ID = 4.0A 8 6 130V 325V 520V 4 2 0 0 2 4 6 8 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 12 D=0.5 100 0.2 0.1 0.05 0.02 10-1 0.01 single pulse ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.55℃/W 10-5 10-4 10-3 10-2 10-1 100 101 t1, Rectangular Pulse Duration [sec] Fig.9 Transient Thermal Response Curve Capacitance [pF] ID, Drain Current [A] 1200 1000 Coss 800 Ciss 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 Crss 200 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 0 1 10 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 102 O.


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