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MDF4N65B N-channel MOSFET 650V
MDF4N65B
N-Channel MOSFET 650V, 4.0A, 2.2Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 650V ID = 4.0A RDS(ON) ≤ 2.2 Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Jul. 2012 Version 1.2
1
G
Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg
Symbol RθJA RθJC
S
Rating 650 ±30 4.0* 2.6* 16* 35 0.28 3.5 4.5 170
-55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Rating 62.5 3.55
Unit oC/W
MagnaChip Semiconductor Ltd.
MDF4N65B N-channel MOSFET 650V
Ordering Information
Part Number MDF4N65BTH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON)
gfs
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf
IS VSD trr Qrr
Test Condition ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 2.0A VDS = 30V, ID = 2.0A
VDS = 520V, ID = 4.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 325V, ID = 4.0A, RG = 25Ω(3)
IS = 4.0A, VGS = 0V IF = 4.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤4.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=19.6mH, IAS=4.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min
650 2.0
-
-
-
-
Typ
1.8 3.11
11.6 2.3 4.6 518 3 61 13 22 41 25
4 245 1.5
Max Unit
V
4.0 1 µA 100 nA 2.2 Ω -S
- nC - pF -
ns -
-A 1.4 V
- ns - µC
Jul. 2012 Version 1.2
2 MagnaChip Semiconductor Ltd.
ID,Drain Current [A]
MDF4N65B N-channel MOSFET 650V
7 Vgs=4.5V
6 =5.0V =5.5V =6.0V
5 =6.5V =7.0V =8.0V
4 =10.0V =15.0V
3
2
1
Notes 1. 250㎲ PulseTest 2. TC=25℃
0 0 5 10 15
VDS,Drain-Source Voltage[V]
Fig.1 On-Region Characteristics
20
3.0
※ Notes :
2.5
1. VGS = 10 V 2. ID = 2.0A
2.0
1.5
1.0
0.5
0.0 -50
0 50 100
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
150
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON)R [Ω ]
3.6
3.4
3.2
3.0
2.8
2.6 VGS=10.0V
2.4 VGS=20V
2.2
2.0
1.8 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250㎂
1.1
1.0
0.9
0.8 -50
0 50 100
TJ, Junction Temperature [oC]
150
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
ID(A)
* Notes ; 10 1. Vds=30V
150℃ 25℃
-55℃
1 456
VGS [V]
Fig.5 Transfer Characteristics
7
IDR Reverse Drain Current [A]
※ Notes : 1. VGS = 0 V 2.250µs Pulse test
10
150℃
25℃
1 0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Jul. 2012 Version 1.2
3 MagnaChip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDF4N65B N-channel MOSFET 650V
10 ※ Note : ID = 4.0A 8 6
130V 325V 520V
4
2
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
12
D=0.5 100
0.2
0.1 0.05 0.02 10-1 0.01
single pulse
※ Notes :
Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.55℃/W
10-5 10-4 10-3 10-2 10-1 100 101
t1, Rectangular Pulse Duration [sec]
Fig.9 Transient Thermal Response Curve
Capacitance [pF]
ID, Drain Current [A]
1200
1000
Coss
800
Ciss 600
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
400 Crss
200
※ Notes ;
1. VGS = 0 V 2. f = 1 MHz
0
1 10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102 O.