Power MOSFET
www.vishay.com
IRFL214, SiHFL214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
Description
www.vishay.com
IRFL214, SiHFL214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
2.0
SOT-223 D
S D G
Marking code: FD
D
G S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3
FEATURES
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Available
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
SOT-223 SiHFL214TR-GE3 a IRFL214TRPbF a SiHFL214T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Curr...
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