DATA SHEET
MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13...
DATA SHEET
MJE13004 MJE13005
NPN SILICON POWER
TRANSISTOR JEDEC TO-220 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon
NPN Power
Transistors, designed for high speed power switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
MJE13004
Collector-Emitter Voltage
VCEO
300
Collector-Emitter Voltage
VCEV
600
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Peak Base Current
IBM
Power Dissipation (TA=25°C)
PD
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
MJE13005 400 700
9.0 4.0 8.0 2.0 4.0 2.0 75
-65 to +150 62.5 1.67
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
ICEV ICEV ICEV ICEV IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE
VCE=600V, VBE(OFF)=1.5V (MJE13004) VCE=600V, VBE(OFF)=1.5V, TC=100°C (MJE13004) VCE=700V, VBE(OFF)=1.5V (MJE13005) VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005) VEB=9.0V IC=10mA (MJE13004) IC=10mA (MJE13005) IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=2.0A, IB=0.5A, TC=100°C IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=2.0A, IB=0.5A, TC=100°C VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A
300 400
10 8.0
1.0 5.0 1.0 5.0 1.0
0.5 0.6 1.0 1.0 1.2 1.6 1.5 60 40
UNITS V V V A A A A W W
°C °C/W °C/W
UNITS
mA mA mA mA mA V V V V V V V V V
(SEE REVERSE SIDE)
R0
MJE13004 / MJE130...