INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
PD - 97426
IRGP4069PbF IRGP4069-EPbF
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