www.vishay.com
IRF9610
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (...
www.vishay.com
IRF9610
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-200
VGS = -10 V
3.0
11
7.0
4.0
Single
FEATURES
Dynamic dV/dt rating P-channel
Available
Fast switching
Available
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET
transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRF9610PbF IRF9610PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source volt...