Power MOSFET
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
- 200 VGS = - ...
Description
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
- 200 VGS = - 10 V
Qg (Max.) (nC)
11
Qgs (nC) Qgd (nC)
7 4
Configuration
Single
D2PAK (TO-263)
S
3
G
GD S
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES Surface Mount Available in Tape and Reel Dynamic dV/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
D2PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Dr...
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