Power MOSFET
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
63 9.3 32 Single
0.85
I2PAK (TO-262)
D
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES Halogen-free According to IEC 61249-2-21
Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W.
I2PAK (TO-262)
SiHF840L-GE3
IRF840LPbF
SiHF840L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
EAS IAR EAR
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C TC = 100 °C
PD...
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