Power MOSFET
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Description
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
D2PAK (TO-263) K
DS G
D
G S
N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
Lead (Pb)-free
IRF630SPbF SiHF630S-E3
IRF630STRLPbFa SiHF630STL-E3a
Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current
TC = 25 °C VGS at 10 V
TC = 100 °C
ID
Pulsed Dra...
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