TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications Driver Stage Amplifier Applications
...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC5174
Power Amplifier Applications Driver Stage Amplifier Applications
2SC5174
Unit: mm
High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1932
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1 A
Base current
IB 0.1 A
Collector power dissipation Junction temperature Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output c...