www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38 5.0 22 Single
I2PAK (TO-262)
D2PAK (TO-263)
1.5 D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating • Repetitive avalanche rated
Available
• Fast switching • Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF830S-GE3 IRF830SPbF
D2PAK (TO-263) SiHF830STRL-GE3 a IRF830STRLPbF a
I2PAK (TO-262) SiHF830L-GE3 IRF830LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery dV/dt c
TC = 25 °C TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
VDS VGS ID IDM
EAS IAR EAR PD dV/dt TJ, Tstg
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). c. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12). d. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. e. 1.6 mm from case. f. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
500 ± 20 4.5 2.9 18 0.59 0.025 280 4.5 7.4 74 3.1 3.5 -55 to +150 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91064
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB mount) a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 62 40 1.7
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.7 Ab
VDS = 50 V, ID = 2.7 Ab
500 -
-V
- 0.61 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 1.5
2.5 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.1 A, VDS = 400 V, see fig. 6 and 13b
VDD = 250 V, ID = 3.1 A, Rg = 12 , RD = 79 , see fig. 10b
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
-
-
-
610 160 - pF 68 -
- 38 - 5.0 nC - 22 8.2 16 -
ns 42 16 -
4.5 nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G S
- - 4.5 A
- - 18
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr Qrr
- 320 640 ns
.