SiHFP9140

Power MOSFET IRFP9140, SiHFP9140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) - 100 VGS = - 10 V 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single 0.20 S TO-247AC G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP9140PbF SiHFP9140-E3 IRFP9140 SiHFP9140 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Rec...