RJK60S4DPE

Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G D S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. STch = 25C, Tch  150C 3. Value at Tc = 25C Symbol VDSS VGSS ID Note1 ID Note1 ID Note1 (pulse) IDR Note1 IDR (pulse) Note1 IAPNote2 EARNote2 Pch Note3 ch-c Tch Tstg Ratings 600 +30, 20 16 10.1 32 16 32 4 0.87 104.1 1.2 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A A mJ W C/W C C R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Page 1 of 7 RJK60S4DPE Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) RDS(on) Min 6...