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BUK7623-75A Dataheets PDF



Part Number BUK7623-75A
Manufacturers Philips
Logo Philips
Description standard level FET
Datasheet BUK7623-75A DatasheetBUK7623-75A Datasheet (PDF)

BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible. 3. Applications s Automotive and general purpos.

  BUK7623-75A   BUK7623-75A


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BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible. 3. Applications s Automotive and general purpose power switching: c c x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) mb 3 source (s) mb mounting base; connected to drain (d) mb MBK106 123 SOT78 (TO-220AB) 2 1 3 MBK116 SOT404 (D2-PAK) Symbol d g MBB076 s Philips Semiconductors BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6. Limiting values Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 175 °C Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 IDM peak drain current Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Source-drain diode Tmb = 25 °C; Figure 1 IDR reverse drain current (DC) IDRM pulsed reverse drain current Avalanche ruggedness Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs WDSS non-repetitive avalanche energy unclamped inductive load; ID = 49 A; VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Typ Max Unit − 75 V − 53 A − 138 W − 175 °C 23 mΩ − 49 mΩ Min Max Unit − 75 V − 75 V − ±20 V − 53 A − 37 A − 213 A − 138 W −55 +175 °C −55 +175 °C − 53 A − 213 A − 120 mJ 9397 750 07583 Product specification Rev. 01 — 09 October 2000 © Philips Electronics N.V. 2000. All rights reserved. 2 of 15 Philips Semiconductors BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET 120 Pder (%) 100 03na19 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) Pder = -------P----t--o--t------P × 100 % t o t ( 25 °C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. 120 Ider (%) 100 03aa24 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 4.5 V Ider = -I------I---D-------- × 100% D ( 25 °C ) Fig 2. Normalized continuous drain current as a function of mounting base temperature. 1000 ID (A) 100 RDSon = VDS/ ID 03nb23 tp = 10 us 10 P δ = tp T D.C. 100 us 1 ms tp T t 1 1 10 10 ms 100 ms VDS (V) 100 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07583 Product specification Rev. 01 — 09 October 2000 © Philips Electronics N.V. 2000. All rights reserved. 3 of 15 Philips Semiconductors BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting Figure 4 base 7.1 Transient thermal impedance Value 60 50 Unit K/W K/W 1.1 K/W 10 Zth(j-mb) (K/W) 1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 Single Shot 0.001 10-6 10-5 10-4 10-3 03nb24 10-2 P δ = tp T tp T t 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 07583 Product specification Rev. 01 — 09 October 2000 © Philips Electronics N.V. 2000. All rights reserved. 4 of 15 Philips Semiconductors BUK7523-75A; BUK7623-75A TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown ID = 0.25 mA; VGS = 0 V voltage Tj = 25 °C 75 − − V Tj = −55 °C 70 − − V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 IDSS IGSS RDSon drain-source leakage current gate-source leakage current drain-source on-state resistance Tj = 25 °C Tj = 175 °C Tj = −55 °C VDS = 75 V; VGS = 0 V Tj = 25 °C Tj = 175 °C VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 234V 1−−V − − 4.4 V − 0.05 10 µA − − 500 µA − 2 100 nA Dynamic characteristics Tj = 25 °C Tj = 175 °C − 17 23 mΩ − − 49 mΩ Ciss Coss Crss td(on) tr td(of.


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