Document
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
Rev. 01 — 09 October 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g) 2 drain (d)
mb
3 source (s)
mb mounting base; connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2 1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS ID Ptot Tj RDSon
drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
VGS = 10 V; ID = 25 A Tj = 175 °C
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS VDGR VGS ID
drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Source-drain diode
Tmb = 25 °C; Figure 1
IDR reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 49 A; VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C
Typ Max Unit − 75 V − 53 A − 138 W − 175 °C
23 mΩ − 49 mΩ
Min Max Unit − 75 V − 75 V − ±20 V − 53 A
− 37 A − 213 A
− 138 W −55 +175 °C −55 +175 °C
− 53 A − 213 A
− 120 mJ
9397 750 07583
Product specification
Rev. 01 — 09 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
2 of 15
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
120
Pder (%) 100
03na19
80
60
40
20
0 0 25 50 75 100 125 150 175 200 Tmb (oC)
Pder
=
-------P----t--o--t------P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
120 Ider (%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200 Tmb (oC)
VGS ≥ 4.5 V Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
1000 ID (A)
100
RDSon = VDS/ ID
03nb23 tp = 10 us
10 P
δ
=
tp T
D.C.
100 us 1 ms
tp T
t
1
1
10
10 ms 100 ms
VDS (V)
100
Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07583
Product specification
Rev. 01 — 09 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
3 of 15
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board; minimum footprint; SOT404 package
Rth(j-mb)
thermal resistance from junction to mounting Figure 4 base
7.1 Transient thermal impedance
Value 60 50
Unit K/W K/W
1.1 K/W
10
Zth(j-mb) (K/W)
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02 Single Shot
0.001 10-6
10-5
10-4
10-3
03nb24
10-2
P
δ
=
tp T
tp T
t
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07583
Product specification
Rev. 01 — 09 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
4 of 15
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
75 − − V
Tj = −55 °C
70 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9
IDSS
IGSS RDSon
drain-source leakage current
gate-source leakage current drain-source on-state resistance
Tj = 25 °C Tj = 175 °C Tj = −55 °C VDS = 75 V; VGS = 0 V Tj = 25 °C Tj = 175 °C VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8
234V 1−−V − − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C Tj = 175 °C
− 17 23 mΩ − − 49 mΩ
Ciss Coss Crss td(on) tr td(of.