JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
MBR20125,150,200
SCHOTTKY BARRIER...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
MBR20125,150,200
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES
Schottky Barrier Chip
1. CATHODE 2. ANODE
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
MBR20125
Value MBR20150
MBR20200
VRRM VRWM
VR VR(RMS)
IO PD RΘJA Tj Tstg
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
125 87.5
150
105 20 2 50 125
-55~+150
200 140
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min
Reverse voltage Reverse current
Forward voltage
V(BR) IR
VF(1) VF(2)
MBR20125
MBR20150 MBR20200 MBR20125 MBR20150 MBR20200 MBR20125 MBR20150 MBR20200 MBR20125 MBR20150 MBR20200
IR=0.1mA
IR=1mA VR=125V VR=150V VR=200V
IF=10A
125 150 200
IF=20A
Typ Max
9 0.1 0.87 0.9 1
Unit
V V A W ℃/W ℃ ℃
Unit
V μA mA
V
A,Nov,2010
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