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FGA70N33BTD 330V, 70A PDP IGBT
FGA70N33BTD
330V, 70A PDP IGBT
Features
• High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant
Applications
• PDP System
August 2011
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES VGES ICpulse(1)* IC pulse(2)*
PD
VRRM IF(AV) IFSM
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation
@ TC = 25oC @ TC = 25oC @ TC = 100oC
Peak Repetitive Reverse Voltage of Diode
Average Rectified Forward Current of diode @ TC = 100oC
Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave
TJ, Tstg TL
Operating Junction Temperature and Storage Temperrature
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(Diode) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGA70N33BTD Rev. C0
1
G
E
Ratings
330 ± 30 160 220 149 60 330 10 100
-55 to +150 300
Typ.
----
Max.
0.84 1.16 40
Units
V V A A W W V A A oC oC
Units
oC/W oC/W oC/W
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FGA70N33BTD 330V, 70A PDP IGBT
Package Marking and Ordering Information
Device Marking
Device
FGA70N33BTD FGA70N33BTDTU
Package
TO-3P
Packaging Type
Tube
Qty per Tube
30ea
Max Qty per Box
--
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
ΔBVCES/ ΔTJ
ICES
IGES
Temperature Coefficient of Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
330 --
--
V
-- 0.3 -- V/oC
-- -- 250 μA -- -- ±400 nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250μA, VCE = VGE
2.3 3.3 4.3
IC = 20A, VGE = 15V
-- 1.1 --
VCE(sat)
Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V,
-- 1.4 --
IC = 70A, VGE = 15V, TC = 25oC
--
1.7
--
IC = 70A, VGE = 15V, TC = 125oC
-- 1.8 --
V V V V
V
Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VCE = 30V, VGE = 0V, f = 1MHz
-- 1380 --- 140 --- 60 --
pF pF pF
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge
VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC
VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC
VCE = 200V, IC = 20A, VGE = 15V
-- 13 --- 26 --- 46 --- 198 --- 13 --- 28 --- 48 --- 268 --- 49 --- 6.8 --- 17.5 --
ns ns ns ns ns ns ns ns nC nC nC
FGA70N33BTD Rev. C0
2
www.fairchildsemi.com
FGA70N33BTD 330V, 70A PDP IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
TC = 25oC TC = 125oC
trr Diode Reverse Recovery Time
TC = 25oC TC = 125oC
Irr
Diode Peak Reverse Recovery IF =10A, dI/dt = 200A/μs
TC = 25oC
Current
TC = 125oC
Qrr Diode Reverse Recovery Charge
TC = 25oC TC = 125oC
Min.
---------
Typ.
1.1 0.95 23 36 2.8 5.1 32 91
Max
1.5 --------
Units
V ns A nC
FGA70N33BTD Rev. C0
3
www.fairchildsemi.com
FGA70N33BTD 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
220 TC = 25oC
176
20V 15V
12V
10V 132
Collector Current, IC [A]
88 8V 44
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
220 TC = 125oC
20V
176 15V
132 12V
88 10V
44 8V
0 01234 Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Characteristics
220
Common Emitter VGE = 15V 176 TC = 25oC TC = 125oC
132
5
0 01234 Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
5
220
Common Emitter Vce = 20V 176 Tc=25oC Tc=125oC
132
Collector Current, Ic [A]
Collector Current, IC [A]
88 88
44 44
0 0123456
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Common Emitter
VGE = 15V 1.8
70A
1.6
Collector-Emitter Voltage, VCE [V]
1.4 40A
1.2
1.0 IC = 20A
0.8 25 50 75 100 125 150 Collector-EmitterCase Temperature, TC [oC]
0 0 2 4 6 8 10 12 14 16 Gate-Emitter Voltage, Vge [V]
Figure 6. Satur.