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FGA70N33BTD Dataheets PDF



Part Number FGA70N33BTD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 70A PDP IGBT
Datasheet FGA70N33BTD DatasheetFGA70N33BTD Datasheet (PDF)

FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant Applications • PDP System August 2011 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings TC = 25.

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FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant Applications • PDP System August 2011 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1)* IC pulse(2)* PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current @ TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Peak Repetitive Reverse Voltage of Diode Average Rectified Forward Current of diode @ TC = 100oC Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave TJ, Tstg TL Operating Junction Temperature and Storage Temperrature Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGA70N33BTD Rev. C0 1 G E Ratings 330 ± 30 160 220 149 60 330 10 100 -55 to +150 300 Typ. ---- Max. 0.84 1.16 40 Units V V A A W W V A A oC oC Units oC/W oC/W oC/W www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Package Marking and Ordering Information Device Marking Device FGA70N33BTD FGA70N33BTDTU Package TO-3P Packaging Type Tube Qty per Tube 30ea Max Qty per Box -- Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES/ ΔTJ ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 -- -- V -- 0.3 -- V/oC -- -- 250 μA -- -- ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 2.3 3.3 4.3 IC = 20A, VGE = 15V -- 1.1 -- VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, -- 1.4 -- IC = 70A, VGE = 15V, TC = 25oC -- 1.7 -- IC = 70A, VGE = 15V, TC = 125oC -- 1.8 -- V V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 1380 --- 140 --- 60 -- pF pF pF Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A, VGE = 15V -- 13 --- 26 --- 46 --- 198 --- 13 --- 28 --- 48 --- 268 --- 49 --- 6.8 --- 17.5 -- ns ns ns ns ns ns ns ns nC nC nC FGA70N33BTD Rev. C0 2 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Electrical Characteristics of the Diode TC = 25°C unless otherwise noted Symbol Parameter Test Conditions VFM Diode Forward Voltage IF = 10A TC = 25oC TC = 125oC trr Diode Reverse Recovery Time TC = 25oC TC = 125oC Irr Diode Peak Reverse Recovery IF =10A, dI/dt = 200A/μs TC = 25oC Current TC = 125oC Qrr Diode Reverse Recovery Charge TC = 25oC TC = 125oC Min. --------- Typ. 1.1 0.95 23 36 2.8 5.1 32 91 Max 1.5 -------- Units V ns A nC FGA70N33BTD Rev. C0 3 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 220 TC = 25oC 176 20V 15V 12V 10V 132 Collector Current, IC [A] 88 8V 44 Collector Current, IC [A] Figure 2. Typical Output Characteristics 220 TC = 125oC 20V 176 15V 132 12V 88 10V 44 8V 0 01234 Collector-Emitter Voltage, VCE [V] Figure 3. Typical Saturation Voltage Characteristics 220 Common Emitter VGE = 15V 176 TC = 25oC TC = 125oC 132 5 0 01234 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 5 220 Common Emitter Vce = 20V 176 Tc=25oC Tc=125oC 132 Collector Current, Ic [A] Collector Current, IC [A] 88 88 44 44 0 0123456 Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Common Emitter VGE = 15V 1.8 70A 1.6 Collector-Emitter Voltage, VCE [V] 1.4 40A 1.2 1.0 IC = 20A 0.8 25 50 75 100 125 150 Collector-EmitterCase Temperature, TC [oC] 0 0 2 4 6 8 10 12 14 16 Gate-Emitter Voltage, Vge [V] Figure 6. Satur.


A1319 FGA70N33BTD ADM101


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