www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4581
DESCRIPTION ·Wit...
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SC4581
DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power
transistor
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum (Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC ICM IB IBM PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 600 450 7 10 20 4 8 65 150
-55~150
UNIT V V V A A A A W
MAX 1.92
UNIT /W
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SC4581
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
IEBO Emitter cut-off current
At rated voltage
ICBO Collector cut-off current ICEO Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times
ton Turn-on time tstg Storage time tf Fall time...