IPI90R800C3

CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ IPI90R800C3 900 V 0.8 Ω 42 nC PG-TO262 CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPI90R800C3 Package PG-TO262 Marking 9R800C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=1.4 A, V DD=50 V I D=1.4 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T J, T stg Rev. 1.0 page 1 Value 6.9 4.4 15 157 0.46 1.4 50 ±20 ±30 104 -55 ... 150 Unit A mJ A V/ns V W °C 2008-07-30 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPI90R800C3 Value 4.1 15 4 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal res...