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IPB026N06N

Infineon Technologies

Power-Transistor


Description
Type OptiMOSTM Power-Transistor Features Optimized for synchronous rectification 100% avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB02...



Infineon Technologies

IPB026N06N

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