IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent ga...
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature
Product Summary V DS R DS(on),max TO-263 ID
100 V 12.3 mΩ 58 A
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3 126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2) T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58 42 232 70 ±20 94 -55 ... 175 55/175/56
1)J-STD20 and JESD22 2) See figure 3
Unit A
mJ V W °C
Rev. 2.3
page 1
2010-06-23
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
-
- 1.6 K/W - 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specifie...