IPP126N10N3G

IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package PG-TO220-3 PG-TO263-3 Marking 126N10N 123N10N Maximum ratings, at T j=25 °C, unless otherwise specified PG-TO262-3 126N10N Parameter Symbol Conditions Value Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=46 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 58 42 232 70 ±20 94 -55 ... 175 55/175/56 1)J-STD20 and JESD22 2) See figure 3 Unit A mJ V W °C Rev. 2.3 page 1 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 1.6 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specifie...