SIPMOS® Small-Signal-Transistor
Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead ...
SIPMOS® Small-Signal-
Transistor
Features P-Channel Enhancement mode Normal level Avalanche rated Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPD15P10P G
-100 V 0.24 Ω -15 A
PG-TO252-3
Type SPP15P10P G SPD15P10P G
Package PG-TO220-3 PG-TO252-3
Marking 15P10P 15P10P
Lead free Packing Yes Non dry Yes Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class
I D T C=25 °C T C=100 °C
I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value -15 -10.6 -60 230 ±20 128
-55 ... 175 1C (1kV to 2kV)
260 °C 55/175/56
Unit A
mJ V W °C
Rev 1.8
page 1
2012-09-11
Parameter
Thermal characteristics
Thermal resistance, junction - soldering point Thermal resistance, junction - ambient
Symbol Conditions
SPD15P10P G
min.
Values typ.
Unit max.
R thJC
R thJA
minimal footprint, steady state
6 cm2 cooling area1), steady state
-
- 1.17 K/W - 75 - 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Transconductance
V (BR)DSS V GS=0 V, I ...