Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon
IPD90N06S4-05
Product Summary V DS R DS(on),max ID
60 V 5.1 mΩ 90 A
PG-TO252-3-11
Type IPD90N04S6-05
Package
Marking
PG-TO252-3-11 4N0605
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 90
77
360 135 90 ±20 107 -55 ... +175 55/175/56
Unit A
mJ A V W °C −
Rev. 1.0
page 1
2009-03-24
IPD90N06S4-05
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.4 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=60µA
I DSS
V DS=60V, V GS=0V, T j=25°C
V DS=60V, V GS=0V, T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=90A
60 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA - 4.2 5.1 mΩ
Rev. 1.0
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2009-03-24
IPD90N06S4-05
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=25V, f =1MHz
V DD=30V, V GS=10V, I D=90A, R G=3.5Ω
Q gs Q gd Qg V plateau
V DD=48V, I D=90A, V GS=0 to 10V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=90A, T j=25°C
t rr
V R=30V, I F=90A, di F/dt =100A/µs
min.
Values typ.
Unit max.
- 5000 6500 pF - 1230 1600 - 50 100 - 20 - ns -5- 35 -8-
- 28 36 nC - 7 14 - 62 81 - 5.6 - V
- - 90 A - - 360 0.6 0.95 1.3 V
- 36 - ns
Reverse recovery charge2)
Q rr
- 41 - nC
1) Current is limited by bondwire; with an R thJC = 1.4K/W the chip is able to carry A at 25°C.
2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
IPD90N06S4-05
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
2 Drain current I D = f(T C); V GS ≥ 6 V
120 100
P tot [W] I D [A]
100 80
80 60
60 40
40
20 20
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
0 200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
100 0.5
10-1
0.1 0.05
0.01
10-2
single pulse
200
1 0.1
Rev. 1.0
1 10 V DS [V]
100
10-3 10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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2009-03-24
IPD90N06S4-05
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
360
10 V
320
280
240
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
15
8V
5V 6V
7V
13
7V
11
I D [A] R DS(on) [mΩ]
200
9 160 6 V
120 7
80 5 V
8V
5
40 10 V
03
0123456
0 80 160 240 320
V DS [V]
I D [A]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V
360 8
-55 °C
320 280
25 °C 175 °C
7
240 6
200
5 160
I D [A] R DS(on) [mΩ]
120 4 80 3 40
0 2345678 V GS [V]
2
-60 -20
20
60 100 140 180
T j [°C]
Rev. 1.0
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2009-03-24
IPD90N06S4-05
V GS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
3.5
3 600 µA
60 µA
2.5
2
1.5
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
103 Coss
102
Crss
1 -60 -20 20 60 100 140 180 T j [°C]
101 0
5 10 15 20 25 30 V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start)
100
102
25 °C 100 °C
150 °C
I F [A] I AV [A]
175 °C 25 °C
101
10
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1 0.1
Rev. 1.0
page 6
1 10 100 1000 t AV [µs]
2009-03-24
IPD90N06S4-05
13 Avalanche energy E AS = f(T j); I D = 45 A
14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA
140 66
120 64
100
62 80
E AS [mJ] V BR(D.