SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
SIPMOS® Power-
Transistor
Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB08P06P G
-60 V 0.3 Ω -8.8 A
PG-TO263-3
Type
Package
SPB08P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Marking Lead free 08P06P Yes
Packing Non dry
Value steady state
-8.8 -6.3 -35.32
Unit A
Avalanche energy, single pulse
E AS I D=8.83 A, R GS=25 Ω
70 mJ
Reverse diode dv /dt
Gate source voltage Power dissipation Operating and storage temperature ESD class
dv /dt
I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C
V GS
P tot T A=25 °C
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
-6
±20 42 "-55 ... +175"
kV/µs
V W °C
260 °C 55/150/56
Rev 1.7
page 1
2012-09-07
Parameter
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
Symbol Conditions
SPB08P06P G
min.
Values typ.
Unit max.
R thJC R thJA R thJA minimal footprint
6 cm2 cooling area1)
-
- 3.6 K/W - 62 - 62 K/W - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics
Dra...