BSC110N06NS3G

Type OptiMOSTM3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSC110N06NS3 G BSC110N06NS3 G Product Summary VDS RDS(on),max ID 60 V 11 mW 50 A Package PG-TDSON-8 Marking 110N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value 50 33 Unit A V GS=10 V, T C=25 °C, R thJA =50K/W2) 12 Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 22 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.4 page 1 2013-05-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSC110N06NS3 G Value 50 2.5 -55 ... 150 55/150/56 Unit W ...