SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating;...
SIPMOS® Power-
Transistor
Features P-Channel Enhancement mode Logic level Avalanche rated Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPD04P10PL G
-100 V 850 mΩ -4.2 A
PG-TO-252-3
Type
Package
SPD04P10PL G PG-TO252-3
Marking 04P10PL
Lead free Yes
Packing Non dry
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class
I D T C=25 °C T C=100 °C
I D,pulse T C=25 °C E AS I D=-4.2 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value steady state
-4.2 3.0 -16.8 57 ±20 38 -55 ... 175 1A (250 V to 500 V) 260 °C 55/175/56
Unit
A
mJ V W °C
Rev 1.6
page 1
2012-09-10
Parameter
Thermal characteristics
Thermal resistance, junction - soldering point Thermal resistance, junction - ambient
Symbol Conditions
SPD04P10PL G
min.
Values typ.
Unit max.
R thJC
R thJA
minimal footprint, steady state
6 cm2 cooling area1), steady state
-
- 3.9 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 mA -100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=-380 µA
-1
-1.5
-2
Zero g...
