APL502B2

APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). T-MaxTM TO-264 Higher FBSOA Popular T-MAX™ or TO-264 Package Higher Power Dissipation D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APL502B2_L (G) UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 500 58 232 ±30 ±40 730 5.84 Volts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 29A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Sour...