GA15IDDJT22-FR4

Non-Isolated Gate Driver Gate Driver for SiC SJT with Signal Isolation Features  Requires single 12 V voltage supply  Pin Out compatible with MOSFET driver boards  Multiple internal voltage level topology for low drive losses  Point-of-load (POL), non-isolated design  5000 V Signal Isolation (up to 10 s)  Capable of high gate currents with 27 W maximum power  RoHS Compliant Product Image GA15IDDJT22-FR4 VISO,SIG PDRIVE fmax = 5000 V = 27 W = 350 kHz Section I: Introduction The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 mΩ SiC Junction Transistors (SJT). The board utilizes DC/DC converters and FOD3182 signal opto-isolation as well as totem-pole gate driver ICs providing fast switching and customizable continuous gate currents necessary for any SJT device. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC MOSFET gate drive solutions. Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram Section II: Compatibility with SiC SJTs The GA15IDDJT22-FR4 has an installed gate resistance (RG) of 0.7 Ω on-board which may need to be modified by the user for safe operation of certain SJT parts. Please see the table below and Section VI for more information. Table 1: GA15IDDJT22-FR4 – SiC SJT Compatibility Information Table SJT Part Number Compatible Notes GA03JT12-247 GA05JT12-247/263 GA06JT12-247 GA10JT12-247/263 GA20JT12-247/263 GA50JT12-247 GA100JT12-227 GA04JT17-247 GA16JT17-247 GA50JT17-247...