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CDNBS08-SLVU2.8-8 Dataheets PDF



Part Number CDNBS08-SLVU2.8-8
Manufacturers BOURNS
Logo BOURNS
Description Low Capacitance TVS Array
Datasheet CDNBS08-SLVU2.8-8 DatasheetCDNBS08-SLVU2.8-8 Datasheet (PDF)

*RoHS COMPLIANT Features ■ RoHS compliant* ■ Protects up to four I/O ports ■ Bidirectional configuration ■ ESD protection ■ Low capacitance: 6 pF Applications ■ Ethernet - 10/100/1000 Base T ■ Personal digital assistants ■ Handheld electronics ■ Cellular phones ■ Video cards CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic.

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*RoHS COMPLIANT Features ■ RoHS compliant* ■ Protects up to four I/O ports ■ Bidirectional configuration ■ ESD protection ■ Low capacitance: 6 pF Applications ■ Ethernet - 10/100/1000 Base T ■ Personal digital assistants ■ Handheld electronics ■ Cellular phones ■ Video cards CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array combination diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Min. Peak Pulse Current (tp= 8/20 µs) Peak Pulse Power (tp= 8/20 µs) 1 Working Voltage IPP PPP VWM Breakdown Voltage @ 1 mA Leakage Current @ VWM Capacitance @ 0 V, 1 MHz VBR ID C 3.0 Snapback Voltage @ 50 mA 2.8 ESD Protection per IEC 61000-4-2 Contact Discharge Air Discharge ESD ±8 ±15 EFT Protection per IEC 61000-4-4 @ 5/50 ns EFT Surge Protection per IEC 61000-4-5 Clamping Voltage @ 8/20 µs @ IP = 5 A 2 @ IP = 24 A 2 @ IPP = 30 A 2 Notes: 1. See Peak Pulse Power vs. Pulse Time. 2. Each differential line pair. VC VC VC Nom. 6 Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Junction Temperature Range Storage Temperature Range Symbol TJ TSTG Min. -55 -55 Nom. +25 +25 8765 1234 Max. 30 600 2.8 1.0 60 8.5 15 17 Unit A W V V µA pF V kV A V V V Max. +125 +150 Unit °C °C *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array Product Dimensions This is an RoHS compliant molded JEDEC narrow body SO-8 package with 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a flammability rating of UL 94V-0. A Recommended Footprint A B D 7 ° NOM. 3 PLCS. K L 45 ° NOM. B C I J G 7 ° NOM. 4 PLCS. 4°±4° H DIMENSIONS = MILLIMETERS (INCHES) E F DC E Dimensions A 1.143 - 1.397 (0.045 - 0.065) B 0.635 - 0.889 (0.025 - 0.035) C 6.223 (0.245) MMinin.. D 3.937 - 4.191 (0.155 - 0.165) E 1.016 - 1.27 (0.040 - 0.050) Dimensions A 4.80 - 5.00 (0.189 - 0.197) B 3.81 - 4.00 (0.150 - 0.157) C 5.80 - 6.20 (0.228 ± 0.244) D 0.36 - 0.51 (0.014 - 0.020) E 1.35 - 1.75 (0.053 - 0.069) F 0.102 - 0.203 (0.004 - 0.008) G 0.25 - 0.50 (0.010 - 0.020) H 0.51 - 1.12 (0.020 - 0.044) I 0.190 - 0.229 (0.0075 - 0.0090) J 4.60 - 5.21 (0.181 - 0.205) K 0.28 - 0.79 (0.011 - 0.031) L 1.27 (0.050) Typical Part Marking CDNBS08-SLVU2.8-8 ..................................................... SL8 How to Order CD NBS08 - SLVU 2.8 - 8 Common Code Chip Diode Package NBS08 = Narrow Body SOIC8 Package Model SLVU = Low Capacitance TVS Array Working Peak Reverse Voltage 2.8 = 2.8 VRWM (Volts) Number of Diodes Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array Block Diagram 8765 1234 Device Pinout Pin Bidirectional Common Mode 1 Line 1 2 GND 3 GND 4 Line 4 5 Line 3 6 GND 7 GND 8 Line 2 Bidirectional Differential Mode Line Pair 1 Line Pair 1 Line Pair 2 Line Pair 2 Line Pair 4 Line Pair 4 Line Pair 3 Line Pair 3 PPP – Peak Pulse Current (W) Performance Graphs Peak Pulse Power vs Pulse Time 10,000 1,000 600 W, 8/20 µs Waveform 100 10 0.01 1 10 100 td – Pulse Duration (µs) 1,000 10,000 IPP – Peak Pulse Current (% of IPP) Pulse Waveform 120 tt 100 80 60 40 20 0 05 Test Waveform Parameters tt = 8 µs td = 20 µs et |td = t IPP/2 10 15 20 25 30 t – Time (µs) % of Rated Power Power Derating Curve 100 80 Peak Pulse Power 8/20 µs 60 40 20 Average Power 0 0 25 50 75 100 125 150 TL – Lead Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array Packaging Information The product is packaged in tape and reel format per EIA-481 standard. d P0 P1 PART ORIENTATION E Index Hole T B PIN 1 F W 120 ° D2 D1 D PA C Trailer Device Leader ....... ....... ....... ....... End ....... ....... ....... ....... Start 10 pitches (min.) 10 pitches (min.) DIMENSIONS: MM (INCHES) W1 Item Carrier Width Carrier Length Carrier Depth Sprocket Hole Reel Outside Diameter Reel Inner Diameter Feed Hole Diameter Sprocket Hole Position Punch Hole.


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