Document
APT20M45BVR(G)
200V, 56A, 0.045Ω
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT20M45BVR(G) TO-247
D3
FEATURES
• Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant
D
G S
Absolute Maximum Ratings Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
VDSS ID IDM VGS
VGSM
PD
Drain Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
200 Volts 56
Amps 224 ±30
Volts ±40 300 Watts 2.4 W/C°
TJ, TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 56 30 1300
°C Amps
mJ
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Min
BVDSS ID(on) RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 I )D[Cont.] Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
200 56
2
Typ Max
0.045 25 250
±100 4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit Volts Amps Ohms
μA
nA Volts
Microsemi Website - http://www.microsemi.com
050-5514 Rev D 3 - 2010
Dynamic Characteristics
Symbol
Ciss Coss Crss Qg Qge Qgd td(on)
tr td(off)
tf
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate-Source Charge Gate- Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
VGS = 0V VDS = 25V f = 1MHz
VGS = 10V VDD= 0.5VDSS ID = I @D[cont.] 25°C
VGS = 10V VDD= 0.5VDSS ID = I @D[cont.] 25°C
RG = 1.6Ω
APT20M45BVR(G)
Min Typ Max Unit
4050 4860
980 1375 300 450
pF
130 195
30 45 nC
55 80
12 24
14 28 ns
43 70
7 14
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr)
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulse Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs)
Min Typ Max Unit
56 Amps 224 1.3 Volts 280 nS 3.5 μC
Thermal Characteristics
Symbol RθJC RθJA
Characteristic Junction to Case Junction to Ambient
Min Typ Max Unit 0.42 C °/W 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
050-5514 Rev D 3 - 2010
Typical Performance Curves
APT20M45BVR(G)
050-5514 Rev D 3 - 2010
Typical Performance Curves
APT20M45BVR(G)
050-5514 Rev D 3 - 2010 Drain
TO-247 (B) Package Outline
e3 100% Sn Plated
4.69 (.185) 5.31 (.209)
1.49 (.059) 2.49 (.098)
15.49 (.610) 16.26 (.640)
6.15 (.242) BSC
20.80 (.819) 21.46 (.845)
5.38 (.212) 6.20 (.244)
3.50 (.138) 3.81 (.150)
0.40 (.016) 0.79 (.031)
4.50 (.177) Max.
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123)
1.65 (.065) 2.13 (.084)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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