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APT20M45BVRG Dataheets PDF



Part Number APT20M45BVRG
Manufacturers Microsemi
Logo Microsemi
Description Power MOSFET
Datasheet APT20M45BVRG DatasheetAPT20M45BVRG Datasheet (PDF)

APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. APT20M45BVR(G) TO-247 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant D G S Absolute Maximum Ratings Symbo.

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APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. APT20M45BVR(G) TO-247 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. Ratings Unit VDSS ID IDM VGS VGSM PD Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 200 Volts 56 Amps 224 ±30 Volts ±40 300 Watts 2.4 W/C° TJ, TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 56 30 1300 °C Amps mJ Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Min BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 I )D[Cont.] Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 200 56 2 Typ Max 0.045 25 250 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Unit Volts Amps Ohms μA nA Volts Microsemi Website - http://www.microsemi.com 050-5514 Rev D 3 - 2010 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qge Qgd td(on) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate-Source Charge Gate- Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD= 0.5VDSS ID = I @D[cont.] 25°C VGS = 10V VDD= 0.5VDSS ID = I @D[cont.] 25°C RG = 1.6Ω APT20M45BVR(G) Min Typ Max Unit 4050 4860 980 1375 300 450 pF 130 195 30 45 nC 55 80 12 24 14 28 ns 43 70 7 14 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr) Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulse Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) Min Typ Max Unit 56 Amps 224 1.3 Volts 280 nS 3.5 μC Thermal Characteristics Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient Min Typ Max Unit 0.42 C °/W 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 050-5514 Rev D 3 - 2010 Typical Performance Curves APT20M45BVR(G) 050-5514 Rev D 3 - 2010 Typical Performance Curves APT20M45BVR(G) 050-5514 Rev D 3 - 2010 Drain TO-247 (B) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 5.38 (.212) 6.20 (.244) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. .


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