Power MOSFET
APT20M45BVR(G)
200V, 56A, 0.045Ω
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement m...
Description
APT20M45BVR(G)
200V, 56A, 0.045Ω
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT20M45BVR(G) TO-247
D3
FEATURES
Faster switching Lower Leakage 100% Avalanche tested Popular TO-247 Package RoHS compliant
D
G S
Absolute Maximum Ratings Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
VDSS ID IDM VGS
VGSM
PD
Drain Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
200 Volts 56
Amps 224 ±30
Volts ±40 300 Watts 2.4 W/C°
TJ, TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 56 30 1300
°C Amps
mJ
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Min
BVDSS ID(on) RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 I )D[Cont.] Zero Gate Voltage Drain Current (VDS = V...
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