APT1204R7KFLL

APT1204R7KFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. TO-220 GDS Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Increased Power Dissipation D Easier To Drive TO-220 Package G S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT1204R7KFLL 1200 3.5 14 ±30 ±40 135 1.08 -55 to 150 300 3.5 10 425 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.75A) Zero Gate Vol...