APM2301

APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V =-4.5V GS Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package Applications D GS Top View of SOT-23 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM2301 APM2301 A : H andling C ode Temp. Range Package Code M01X Package Code A : SOT-23 O peration Junction Tem p. R ange C : -5 5 to 1 5 0° C H andling C ode TR : Tape & Reel X - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS Drain-Source Voltage Gate-Source Voltage -20 V ±16 ID* Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed -2.8 A -10 * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM2301 Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθjA Parameter Maximum Power Dissipation TA=25°C TA=100°C Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient Rating 1.25 0.5 150 -55 to 150 100 Unit W °C °C °C/W...